Datasheet4U Logo Datasheet4U.com

MXN3342 - N-Channel Enhancement Mode Power MOSFET

General Description

The MXN3342 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS=30V, ID=35A RDS(ON)(Typ. )=10mΩ @ VGS=4.5V RDS(ON)(Typ. )=6.5mΩ @ VGS=10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number MXN3342
Manufacturer ChipSourceTek
File Size 681.81 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3342 Datasheet

Other Datasheets by ChipSourceTek

Part Number Description
MXN3345 P-Channel Enhancement Mode Power MOSFET
MXN3347 P-Channel Power MOSFET
MXN3380 Dual N-Channel Enhancement Mode Power MOSFET
MXN3382 Dual N-Channel Enhancement Mode Power MOSFET
MXN3388L Dual N-Channel Enhancement Mode Power MOSFET
MXN3016M N-Channel Power MOSFET
MXN3050G N-Channel Enhancement Mode Power MOSFET
MXN3060 N-Channel Enhancement Mode Power MOSFET
MXN30D12M Dual N-Channel Power MOSFET
MXN2384 Dual N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET MXN3342 DESCRIPTION The MXN3342 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES  VDS=30V, ID=35A RDS(ON)(Typ.)=10mΩ @ VGS=4.5V RDS(ON)(Typ.)=6.