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MXN3050G - N-Channel Enhancement Mode Power MOSFET

Download the MXN3050G datasheet PDF. This datasheet also covers the MXN3050G-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge.

It can be used in awide variety Of applications.

Key Features

  • VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.5V k Low density cell desig e Fully characterized avalanche voltage T and current Good stability and uniformity with high EAS e Excellent package for good heat dissipation c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MXN3050G-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MXN3050G
Manufacturer ChipSourceTek
File Size 807.38 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN3050G Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Enhancement Mode Power MOSFET Description The MXN3050G uses advanced trench technology and design to provide excellent RDS(ON), With low gate charge. It can be used in awide variety Of applications. MXN3050G General Features VDS = 30V,ID = 50 A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=-4.