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MXN2386 - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

applications.

It is ESD protested..

Key Features

  • Schematic diagram.
  • VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ. )=6mΩ @VGS=4.2V RDS(ON)(Typ. )=6.4mΩ @VGS=3.8V RDS(ON)(Typ. )=6.6mΩ @VGS=2.5V RDS(ON)(Typ. )=8.3mΩ ESD Rating:2000V HBM.
  • High power and current handing capability k.
  • Lead free product is acquired.
  • Surface mount package Te.

📥 Download Datasheet

Datasheet Details

Part number MXN2386
Manufacturer ChipSourceTek
File Size 744.18 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MXN2386 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual N-Channel Enhancement Mode Power MOSFET Description The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications. It is ESD protested.. General Featuies MXN2386 General Features Schematic diagram  VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ.)=6mΩ @VGS=4.2V RDS(ON)(Typ.)=6.4mΩ @VGS=3.8V RDS(ON)(Typ.)=6.6mΩ @VGS=2.5V RDS(ON)(Typ.)=8.