MXN2386 - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

ChipSourceTek

Part number	MXN2386
Manufacturer	ChipSourceTek
File Size	744.18 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MXN2386 Datasheet
Additional preview pages of the MXN2386 datasheet.

The MXN2386 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Schematic diagram.
VDS =20V，ID =12A @VGS=4.5V RDS(ON)(Typ. )=6mΩ @VGS=4.2V RDS(ON)(Typ. )=6.4mΩ @VGS=3.8V RDS(ON)(Typ. )=6.6mΩ @VGS=2.5V RDS(ON)(Typ. )=8.3mΩ ESD Rating:2000V HBM.
High power and current handing capability k.
Lead free product is acquired.
Surface mount package Te.

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Published: Mar 2, 2025 |