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BTB718N3 - PNP Transistor

Features

  • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A.
  • Excellent current gain characteristics.
  • Pb-free lead plating and halogen-free package Symbol BTB718N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation Power Dissipation Operating Junction and Storage Temperature Ran.

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Datasheet Details

Part number BTB718N3
Manufacturer CYStech
File Size 273.07 KB
Description PNP Transistor
Datasheet download datasheet BTB718N3 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTB718N3 Spec. No. : C240N3 Issued Date : 2013.02.19 Revised Date : Page No. : 1/8 Features • Low VCE(sat), VCE(sat)=-0.3 V (max), at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Pb-free lead plating and halogen-free package Symbol BTB718N3 Outline SOT-23 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation Power Dissipation Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP IB PD Tj ; Tstg Limits -50 -30 -7 -3 -6 (Note 1) -0.5 0.225 0.
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