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BTB772T3S - PNP Transistor

Download the BTB772T3S datasheet PDF. This datasheet also covers the BTB772T3 variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A.
  • Excellent current gain characteristics.
  • Complementary to BTD882T3/S.
  • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTB772T3_CystechElectonicsCorp.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BTB772T3S
Manufacturer Cystech Electonics Corp
File Size 193.86 KB
Description PNP Transistor
Datasheet download datasheet BTB772T3S Datasheet

Full PDF Text Transcription

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CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor www.DataSheet4U.com Spec. No. : C817T3-H Issued Date : 2002.08.18 Revised Date : 2005.09.16 Page No. : 1/4 BTB772T3/S Features • Low VCE(sat), typically -0.3V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882T3/S • Pb-free package is available Equivalent Circuit BTB772T3/S Outline TO-126 B:Base C:Collector E:Emitter E C B Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg Limit -40 -30 -5 -3 -7 1 10 150 -55~+150 Unit V V V A A W °C °C *1 Note : *1.
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