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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C817A3-R Issued Date : 2003.05.31 Revised Date:2006.05.15
Page:1/4
BTB772SA3
Features
• Low VCE(sat),typically -0.3 V at IC / IB = -2A / -0.1A • Excellent current gain characteristics • Complementary to BTD882SA3 • Pb-free package
Symbol
BTB772SA3
Outline
TO-92
B：Base C：Collector E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature
Note : Single Pulse Pw≦350μs, Duty≦2%.
BTB772SA3 Datasheet
