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CYStech Electronics Corp.
Low VCE(sat) PNP Epitaxial Planar Transistor
www.DataSheet4U.com Spec. No. : C817M3-H Issued Date : 2003.06.17 Revised Date:2005.08.19
Page:1/5
BTB772AM3
Features
• Low VCE(sat), typically -0.3 V at IC / IB = -2A / -0.2A • Excellent current gain characteristics • Complementary to BTD882AM3
Symbol
BTB772AM3
Outline
SOT-89
B:Base C:Collector E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP Pd Limit -50 -50 -6 -3 -7 (Note 1) 600 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.