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BTB772J3 - PNP Transistor

Features

  • Low VCE(sat).
  • Excellent current gain characteristics.
  • Complementary to BTD882J3.
  • RoHS compliant package Symbol BTB772J3 Outline TO-252AB TO-252AA B:Base C:Collector E:Emitter BCE B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note :.
  • 1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(.

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Datasheet Details

Part number BTB772J3
Manufacturer CYStech
File Size 226.82 KB
Description PNP Transistor
Datasheet download datasheet BTB772J3 Datasheet

Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C809J3 Issued Date : 2008.06.12 Revised Date: 2010.12.08 Page:1/7 Low Vcesat PNP Epitaxial Planar Transistor BTB772J3 BVCEO IC RCE(SAT) -30V -3A 225mΩ typ. Features • Low VCE(sat) • Excellent current gain characteristics • Complementary to BTD882J3 • RoHS compliant package Symbol BTB772J3 Outline TO-252AB TO-252AA B:Base C:Collector E:Emitter BCE B CE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Note : *1. Single Pulse Pw≦350μs,Duty≦2%. Symbol VCBO VCEO VEBO IC(DC) IC(pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj Tstg BTB772J3 Limit -40 -30 -6 -3 -5 1.
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