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CMN4012S9 - N-Channel 40V Power MOSFET

Datasheet Summary

Description

Applications CMN4012S9 is the N-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-

Personal Digital Assistants nology.

Portable Instrumentation optimized swi

Features

  • VDS: 40V.
  • ID: 23.6A.
  • RDSON (@VGS=10V) : < 15mΩ.
  • RDSON (@VGS=4.5V) : < 23mΩ.
  • High density cell design for extremely low RDSON.
  • Excellent on-resistance and DC current capability Marking Information D N4012S9 XXXX Device Code = N4012S9 Date Code = XXXX G D S Equivalent Circuit and Pin Configuration SOT-89 (Top View) Ordering Information Part Number Packaging CMN4012S9 1000/Tape & Reel Reel Size 7 inch Absolute Maximum Ratings (TA=25 ℃ unless otherwise not.

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Datasheet Details

Part number CMN4012S9
Manufacturer Applied Power Microelectronics
File Size 1.23 MB
Description N-Channel 40V Power MOSFET
Datasheet download datasheet CMN4012S9 Datasheet
Additional preview pages of the CMN4012S9 datasheet.

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    CMN4012S9 N-Channel 40V(D-S) Power MOSFET Description Applications CMN4012S9 is the N-Channel enhancement mode power  Cellular Handsets and Accessories field effect transistors with high cell density, trench tech-  Personal Digital Assistants nology. This high density process and design have been  Portable Instrumentation optimized switching performance and especially tailored to  Load switch minimize on-state resistance. Features  VDS: 40V  ID: 23.6A  RDSON (@VGS=10V) : < 15mΩ  RDSON (@VGS=4.
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