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CMN2308
N-Channel Enhancement Mode Field Effect Transistor
General Description
The CMN2308 is the N-Channel enhancement mode power field effect transistors using advanced trench technology to provide excellent RDS(ON). These devices are particularly suited for low voltage application , such as high side power loss of mobile phone and notebook computer power management and other battery power supply circuit of the switch and the low line, need to be in a very small outline surface mount package.
Features
RDS(ON)<105mΩ @ VGS=10V RDS(ON)<125mΩ @ VGS=4.
CMN2308 Datasheet
