CMN2300 - N-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

These miniature surface mount MOSFETs utilize High Cell Density process.

Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.

Features

RDS(ON).

Cmos

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Datasheet Details

Part number	CMN2300
Manufacturer	Cmos
File Size	878.72 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	CMN2300 Datasheet
Additional preview pages of the CMN2300 datasheet.

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CMN2300 N-Channel Enhancement Mode Field Effect Transistor General Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features RDS(ON)<25mΩ @ VGS=4.5V RDS(ON)<35mΩ @ VGS=2.

Published: Mar 7, 2017 |