CMN2309 - P-Channel Enhancement Mode Field Effect Transistor

Datasheet Summary

Description

This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.

Features

RDS(ON).

Cmos

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Datasheet Details

Part number	CMN2309
Manufacturer	Cmos
File Size	768.65 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	CMN2309 Datasheet
Additional preview pages of the CMN2309 datasheet.

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CMN2309 P-Channel Enhancement Mode Field Effect Transistor General Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications. Features RDS(ON)<250mΩ @ VGS=-10V RDS(ON)<300mΩ @ VGS=-4.5V Fast switching speed Surface mount package Absolute Maximum Ratings Product Summery BVDSS -60V RDSON 250m ID -1.

Published: Mar 7, 2017 |