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SSC8362GS1 - Dual N-Channel Enhancement Mode MOSFET

Description

This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance.

This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.

Features

  • s VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6.5A.
  • General.

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Datasheet Details

Part number SSC8362GS1
Manufacturer AFSEMI
File Size 235.89 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8362GS1 Datasheet

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Full PDF Text Transcription

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SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 30mR@10V 35mR@4V5 ID 6.5A  General Description This N-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is suitable for use as a load switch，power management in PWM controlled DC/DC Converter and push-pull DC/AC Inverter Systems.  Package Information  Applications  Inverter;  Pin configuration Top View ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.
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