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SSC8322GN2 - Dual N-Channel Enhancement Mode MOSFET

Description

SSC8322GN2 combines 2 N-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Package Infor

Features

  • s VDS 20V VGS ±12V RDSon TYP 50mR@4V5 65mR@2V5 ID 4A.

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Datasheet Details

Part number SSC8322GN2
Manufacturer AFSEMI
File Size 198.03 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8322GN2 Datasheet
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Full PDF Text Transcription

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SSC8322GN2 Dual N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 50mR@4V5 65mR@2V5 ID 4A  Applications  Li Battery Charging;  DC/DC Converter;  Load Switch;  Power Management in Portable, Battery Powered Devices  Pin Configuration Top View  General Description SSC8322GN2 combines 2 N-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.25 0.3 0.35 I - 0.65 - J - 0.
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