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SSC8322GN2
Dual N-Channel Enhancement Mode MOSFET
Features
VDS 20V
VGS ±12V
RDSon TYP 50mR@4V5 65mR@2V5
ID 4A
Applications
Li Battery Charging; DC/DC Converter; Load Switch;
Power Management in Portable, Battery
Powered Devices
Pin Configuration
Top View
General Description
SSC8322GN2 combines 2 N-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Package Information
Package:DFN2x2
Unit:mm
Dim Min Typ Max
A 1.95 2 2.08
B 1.95 2 2.08
C 0.5 0.6 0.7
D 0.9 1 1.1
E
0.545
0.575
0.605
F - 0.13 -
G 0.2 0.25 0.3
H 0.25 0.3 0.35
I - 0.65 -
J - 0.