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SSC8333GS1 - Dual P-Channel Enhancement Mode MOSFET

Description

minimize on-state resistance.

Features

  • s.

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Datasheet Details

Part number SSC8333GS1
Manufacturer AFSEMI
File Size 198.67 KB
Description Dual P-Channel Enhancement Mode MOSFET
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Full PDF Text Transcription

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SSC8333GS1 Dual P-Channel Enhancement Mode MOSFET  Features  Applications  TFT panel power switch; VDS -30V VGS ±20V RDSon TYP 61mR@-10V 77mR@-4V5 ID -4.5A  High Side DC/DC Converter  High Side Driver for Brushless DC Motor  Portable DVD, DPF  Pin configuration  General Description Top View D1 D1 D2 D2 This device combines 2 P-Channel enhancement mode power FETs which are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable S1 G1 S2 G2 equipment, power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
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