Click to expand full text
SSC8336GS1
Dual N-Channel Enhancement Mode MOSFET
Features
Applications Inverter;
VDS VGS
RDSon TYP
ID
30V ±20V
16mR@10V 20mR@4V5
9A
Pin configuration
General Description
Top View
This N-Channel enhancement mode power FETs are produced with high
cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device is suitable for use as a load
switch，power management in PWM controlled DC/DC Converter and
push-pull DC/AC Inverter Systems.
Package Information
Ordering Information
Device SSC8336GS1
Marking SSC
8336GS1
Package SOP8
Qty per Reel 2500
Reel Size 13 Inch
SSC-1V0
http://www.afsemi.
SSC8336GS1 Datasheet
