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SSC8330GQ4 - Dual N-Channel Enhancement Mode MOSFET

Description

excellent RDS(ON) and low gate charge.

suitable for use as a load switch or in PWM applications.

Package Information SSC-1V0 Package: DFN3X3-8L http://www.afsemi.com 1 / 11 Analog Future SSC8330GQ4 Absolute Ma

Features

  • s.

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Datasheet Details

Part number SSC8330GQ4
Manufacturer AFSEMI
File Size 1.62 MB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8330GQ4 Datasheet

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Full PDF Text Transcription

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SSC8330GQ4 Dual Asymmetric N-Channel Enhancement Mode MOSFET  Features  Applications  Load Switch VDS VGS RDSon TYP ID  Isolated DC/DC Converters 9.5 mR@10V Q1 30V ±20V 15A 12.5mR@4V5  DCDC conversion in Computing 8 mR@10V  Pin configuration Q2 30V ±20V 18A 10mR@4V5 Bottom View Top View  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information SSC-1V0 Package: DFN3X3-8L http://www.afsemi.
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