Datasheet4U Logo Datasheet4U.com

SSC8323GN2 - Dual P-Channel Enhancement Mode MOSFET

Description

SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

Package Infor

Features

  • s VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A.

📥 Download Datasheet

Datasheet Details

Part number SSC8323GN2
Manufacturer AFSEMI
File Size 213.25 KB
Description Dual P-Channel Enhancement Mode MOSFET
Datasheet download datasheet SSC8323GN2 Datasheet

📁 Similar Datasheet

  • SSC8033GS3 - P-Channel Enhancement Mode MOSFET (SPIRIT-SEMI)
  • SSC8035GS6 - P-Channel MOSFET (VBsemi)
  • SSC-AM101 - CHIP LED DEVICE (Seoul Semiconductor)
  • SSC-AWT722 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-CMX2 - Clip Addressable Output Module (Firesense)
  • SSC-D3232SL-88 - LED DOT MATRIX (Seoul Semiconductor)
  • SSC-ERT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FAT801 - TOP LED DEVICE (Seoul Semiconductor)
  • SSC-FB102 - LED DEVICE (Seoul Semiconductor)
  • SSC-HB601 - LED DEVICE (Seoul Semiconductor)
Other Datasheets by AFSEMI
  • SSC8323GN3 - Dual P-Channel Enhancement Mode MOSFET
  • SSC8322GN2 - Dual N-Channel Enhancement Mode MOSFET
  • SSC8325GS1 - Dual P-Channel Enhancement Mode MOSFET
  • SSC8326GS1V1.0 - Dual N-Channel Enhancement Mode MOSFET
  • SSC8329GS1 - Dual P-Channel Enhancement Mode MOSFET
  • SSC8313GS1 - Dual P-Channel Enhancement Mode MOSFET
  • SSC8330GQ4 - Dual N-Channel Enhancement Mode MOSFET
  • SSC8333GS1 - Dual P-Channel Enhancement Mode MOSFET

Full PDF Text Transcription

Click to expand full text
SSC8323GN2 Dual P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 60mR@-4V5 75mR@-2V5 105mR@-1V8 ID -3.5A  Applications  Li Battery Charging;  High Side DC/DC Converter;  Load Switch;  Power Management in Portable, Battery Powered Devices  Pin configuration Top View  General Description SSC8323GN2 combines 2 P-Channel enhancement mode power MOSFETs which are produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Package Information SSC-1V0 Package:DFN2x2 Unit:mm Dim Min Typ Max A 1.95 2 2.08 B 1.95 2 2.08 C 0.5 0.6 0.7 D 0.9 1 1.1 E 0.545 0.575 0.605 F - 0.13 - G 0.2 0.25 0.3 H 0.25 0.
Published: |