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QPD1018 GaN RF IMFET

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Description

QPD1018 500W, 50V, 2.7 * 3.1 GHz, GaN RF IMFET Product Overview The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
Tray of 18 QPD1018 Pack of 2 QPD1018 2. 3.

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Datasheet Specifications

Part number
QPD1018
Manufacturer
qorvo
File Size
1.85 MB
Datasheet
QPD1018-qorvo.pdf
Description
GaN RF IMFET

Features

* Frequency: 2.7 to 3.1 GHz
* Output Power (P3dB)1: 575 W
* Linear Gain1: 17.7 dB
* Typical PAE3dB1: 67.9%
* Operating Voltage: 50 V
* Low thermal resistance package

Applications

* Military radar
* Civilian radar

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