Datasheet4U Logo Datasheet4U.com

QPD1018 - GaN RF IMFET

QPD1018 Description

QPD1018 500W, 50V, 2.7 * 3.1 GHz, GaN RF IMFET Product Overview The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT whi.
Tray of 18 QPD1018 Pack of 2 QPD1018 2. 3.

QPD1018 Features

* Frequency: 2.7 to 3.1 GHz
* Output Power (P3dB)1: 575 W
* Linear Gain1: 17.7 dB
* Typical PAE3dB1: 67.9%
* Operating Voltage: 50 V
* Low thermal resistance package

QPD1018 Applications

* Military radar
* Civilian radar

📥 Download Datasheet

Preview of QPD1018 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
QPD1018
Manufacturer
qorvo
File Size
1.85 MB
Datasheet
QPD1018-qorvo.pdf
Description
GaN RF IMFET

📁 Related Datasheet

  • QPD1011 - 7W GaN RF Input-Matched Transistor (Qorvo)
  • QPD1013 - GaN RF Transistor (Qorvo)
  • QPD1019 - GaN RF IMFET (Qorvo)
  • QPD1003 - GaN RF IMFET (Qorvo)
  • QPD1006 - RF IMFET (Qorvo)
  • QPD1026L - GaN RF Input-Matched Transistor (Qorvo)
  • QPD0005M - GaN RF Transistor (Qorvo)
  • QPD0012 - Asymmetric Doherty (Qorvo)

📌 All Tags

qorvo QPD1018-like datasheet