Description
7” Short Reel
100 Pieces 50
1000 MHz EVB
Datasheet Rev.E, March 2024 Subject to change without notice | All rights reserved
- 1 of 23 -
www.qorvo.com
QPD1011
30
1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor
Absolute Maximum Ratings1
Recommended Operating Conditions1
Parameter
Rating Units
Breakdown Voltage,BVDG Gate Voltage Range, VG Drain Current, IDMAX Power Dissipation, PDISS RF Input Power, Pulsed, 1.3 GHz, T = 25 °C2 Mounting Temperature (30 Sec
Features
- Frequency: 30 to 1200 MHz.
- Output Power (P3dB)1: 8.7 W.
- Linear Gain1: 21 dB.
- Typical PAE3dB1: 60 %.
- Operating Voltage: 50 V.
- CW and Pulse capable
Note 1: @ 1 GHz Load Pull.
QPD1011-Qorvo.pdf
