QPD1013 Datasheet - Qorvo

QPD1013 GaN RF Transistor

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to .

QPD1013 Features

* Frequency: DC to 2.7 GHz

* Output Power (P3dB): 178 W1

* Linear Gain: 21.8 dB1

* Typical PAE3dB: 64.8 %1

* Operating Voltage: 65 V

* Low thermal resistance package

* CW and Pulse capable

* 7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull) Applications

* Military

QPD1013-Qorvo.pdf

QPD1013 Datasheet Preview — Preview of QPD1013 PDF

Datasheet Details

Part number:

QPD1013

Manufacturer:

Qorvo

File Size:

2.31 MB

Description:

Gan rf transistor.

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QPD1013 QPD1013 GaN Transistor Qorvo

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