QPD0030 Datasheet - TriQuint Semiconductor

QPD0030 RF Power Transistor

The QPD0030 is a wide band over-molded QFN discrete power amplifier. The device is a single stage unmatched power amplifier transistor. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD.

QPD0030 Features

* Operating Frequency Range: DC to 4 GHz

* Operating Drain Voltage: 48 V

* Maximum Output Power (PSAT): 49 W

* Maximum Drain Efficiency: 72.5%

* Efficiency-Tuned P3dB Gain: 21.7 dB

* Surface Mount Plastic Overmold package Functional Block Diagram Gen

QPD0030-TriQuintSemiconductor.pdf