QPD1003 Datasheet - Qorvo

QPD1003 GaN RF IMFET

1.2 * 1.4 GHz RF IMFET 1.2 * 1.4 GHz EVB Datasheet Rev. E, June 14, 2019 | Subject to change without notice - 1 of 18 - www.qorvo.com QPD1003 500W, 50V, 1.2 * 1.4 GHz, GaN RF IMFET Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage,BVDG Gate Voltage Ran.

QPD1003 500W, 50V, 1.2 1.4 GHz, GaN RF IMFET Product Overview The QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed and linear operations. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram Key Featur.

QPD1003 Features

* Frequency: 1.2 to 1.4 GHz

* Output Power (P3dB)1: 540 W

* Linear Gain1: 19.9 dB

* Typical PAE3dB1: 66.7%

* Operating Voltage: 50 V

* Low thermal resistance package

* Pulse capable Note 1: @ 1.3 GHz Applications

* Military radar

QPD1003-Qorvo.pdf

QPD1003 Datasheet Preview — Preview of QPD1003 PDF

Datasheet Details

Part number:

QPD1003

Manufacturer:

Qorvo

File Size:

1.07 MB

Description:

Gan rf imfet.

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