QPD0030 GaN RF Power Transistor

qorvo

Description

QPD0030 ® 45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor Product Overview The QPD0030 is a 45 W (P3dB) unmatched discrete GaN on SiC HEMT which o.
Short Reel. 100 Pieces 7” Reel. 500 pieces 1. 1. 2.

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Datasheet Specifications

Part number: QPD0030
Manufacturer: qorvo
File Size: 1.04 MB
Datasheet: QPD0030-qorvo.pdf
Description: GaN RF Power Transistor

Features

* Operating Frequency Range: DC to 5 GHz
* Operating Drain Voltage: +48 V
* Maximum Output Power (PSAT): 49.0 W (1)
* Maximum Drain Efficiency: 71.9% (1)
* Efficiency-Tuned P3dB Gain: 22.1 dB (1)
* Surface Mount Plastic Package Functional Block Diagra

Applications

* and can support both CW and pulsed mode of operations. The QPD0030 can be used in Doherty architecture for the final stage of a base station power amplifier for small cell, microcell, and active antenna systems. The QPD0030 can also be used as a driver in a macrocell base station power amplifier. Th

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QPD0030 GaN Power Transistor qorvo

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