Datasheet4U Logo Datasheet4U.com

PMPB10XNEA - N-channel MOSFET

Description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Features

  • Low threshold voltage.
  • Trench MOSFET technology.
  • Side wettable flanks for optical solder inspection.
  • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C).
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMPB10XNE single N-channel Trench MOSFET NXP
PMPB11EN 30V N-channel Trench MOSFET NXP
PMPB12UN 20V single N-channel Trench MOSFET NXP Semiconductors
PMPB13XNE single N-channel Trench MOSFET NXP
PMPB15XN single N-channel Trench MOSFET NXP Semiconductors

Other Datasheets by Nexperia

Part Number Description
PMPB10XNE N-channel MOSFET
PMPB100ENE N-channel MOSFET
PMPB10EN N-channel MOSFET
PMPB11EN N-channel MOSFET
PMPB12EP P-channel Trench MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMPB10XNEA 20 V, N-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side wettable flanks for optical solder inspection • ElectroStatic Discharge (ESD) protection > 1 kV HBM (class H1C) • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4. Quick reference data Table 1.
Published: |