Datasheet4U Logo Datasheet4U.com

WPM3021 - MOSFET

Description

The WPM3021 is P-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance.
  • Extremely Low Threshold Voltage.
  • Small package SOP-8L WPM3021 Http://www. sh-willsemi. com (4) (3) (2) (1) SOP-8L DD 87 DD 65 12 SS 34 SG Pin configuration (Top view).

📥 Download Datasheet

Datasheet Details

Part number WPM3021
Manufacturer WillSEMI
File Size 854.90 KB
Description MOSFET
Datasheet download datasheet WPM3021 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WPM3401 P-Channel Enhancement Mode MOSFET JESTEK
WPM04-2045A 4Watts POWER AMPLIFIER WanTcom
WPM1480 P-Channel MOSFET Will Semiconductor
WPM1483 P-Channel MOSFET Will Semiconductor
WPM1485 P-Channel MOSFET Will Semiconductor

Other Datasheets by WillSEMI

Part Number Description
WPM3022 MOSFET
WPM3023 MOSFET
WPM3004 MOSFET
WPM3005 MOSFET
WPM3012 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WPM3021 Single P-Channel, -30V, -11.5A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 11@ VGS=-10V 15@VGS=-5V Descriptions The WPM3021 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WPM3021 is Pb-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance  Extremely Low Threshold Voltage  Small package SOP-8L WPM3021 Http://www.sh-willsemi.
Published: |