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VT1045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VT1045C Description

New Product VT1045C, VIT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 .

VT1045C Features

* TMBS TO-220AB ®
* Trench MOS Schottky technology TO-262AA
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Compliant to RoHS Directive 2002/95/EC and in ac

VT1045C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case: TO-220AB and TO-262AA Molding compound

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Datasheet Details

Part number
VT1045C
Manufacturer
Vishay ↗
File Size
189.51 KB
Datasheet
VT1045C_Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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