Datasheet Details
- Part number
- VT1045BP
- Manufacturer
- Vishay ↗
- File Size
- 171.05 KB
- Datasheet
- VT1045BP_Vishay.pdf
- Description
- Trench MOS Barrier Schottky Rectifier
VT1045BP Description
VT1045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.41 V.
VT1045BP Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Compliant to RoHS Directive 2011/65/EU
* Halogen-free according to IEC 61249-2-21 definition
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VT1045BP Applications
* For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias. CASE
MECHANICAL DATA PRIMARY CHARACTERISTCS
IF(DC) VRRM IFSM VF at IF = 10 A TOP max. (AC mode) TJ max. (DC forward current) 10 A 45 V 100 A 0.52 V 150 °C 200 °C
Case: TO-220AC Mold
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