VT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT10202C-M3, VBT10202C-M3, VIT10202C-M3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra L.

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Datasheet Specifications

Part number: VT10202C-M3
Manufacturer: Vishay ↗
File Size: 141.57 KB
Datasheet: VT10202C-M3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology generation 2
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. 2 1 VBT10202C PIN 1 K PIN 2 HEATSINK 3 2 1 VIT10202C PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 2x5A VRRM 200 V IFSM 100 A VF at IF = 5

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VT10202C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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