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VT10200C-M3 - Trench MOS Barrier Schottky Rectifier

VT10200C-M3 Description

www.vishay.com VT10200C-M3 Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 2.5 A TMBS ® TO-220AB .

VT10200C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 VT10200C 3

VT10200C-M3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade

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Datasheet Details

Part number
VT10200C-M3
Manufacturer
Vishay ↗
File Size
120.46 KB
Datasheet
VT10200C-M3-Vishay.pdf
Description
Trench MOS Barrier Schottky Rectifier

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Trench MOS Barrier Schottky Rectifier Vishay
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