VBT6045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VBT6045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A T.

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Datasheet Specifications

Part number: VBT6045C-E3
Manufacturer: Vishay ↗
File Size: 82.50 KB
Datasheet: VBT6045C-E3-Vishay.pdf
Description: Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 45 V 320 A 0.47 V 150 °C TO-263AB Diode variations Common cathode MECHANICA

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VBT6045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay

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