Datasheet4U Logo Datasheet4U.com

VBT6045C-E3 Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT6045C-E3 Description

www.vishay.com VBT6045C-E3 Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A T.

VBT6045C-E3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

VBT6045C-E3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 2 x 30 A 45 V 320 A 0.47 V 150 °C TO-263AB Diode variations Common cathode MECHANICA

📥 Download Datasheet

Preview of VBT6045C-E3 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VBT6045C-E3
Manufacturer
Vishay ↗
File Size
82.50 KB
Datasheet
VBT6045C-E3-Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBTA1220N - N-Channel MOSFET (VBsemi)
  • VBTA1220NS - N-Channel MOSFET (VBsemi)
  • VBTA7322 - N-Channel MOSFET (VBsemi)

📌 All Tags

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT6045C-E3-like datasheet