VBT5200-E3 Trench MOS Barrier Schottky Rectifier

Vishay

Description

VT5200-E3, VFT5200-E3, VBT5200-E3, VIT5200-E3 www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58.

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Datasheet Specifications

Part number: VBT5200-E3
Manufacturer: Vishay ↗
File Size: 192.42 KB
Datasheet: VBT5200-E3-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder dip 275 °C max. 10 s, per JESD 22-B106 (for TO-220AC, ITO-22

Applications

* For use in high frequency converters, switching power su

VBT5200-E3 Distributors

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VBT5200-E3 Trench MOS Barrier Schottky Rectifier Vishay

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