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Si2301BDS
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20
rDS(on) (W)
0.100 @ VGS = - 4.5 V 0.150 @ VGS = - 2.5 V
ID (A)b
- 2.4 - 2.0
TO-236 (SOT-23)
G
1 3 D Ordering Information: Si2301BDS-T1
S
2
Top View Si2301 BDS (L1)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 sec
- 20 "8 - 2.4 - 1.9 - 10 - 0.72 0.9 0.57
Steady State
Unit
V
- 2.2 - 1.8 A
- 0.6 0.7 0.
Si2301BD Datasheet
