Full PDF Text Transcription for SI2301BDS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
SI2301BDS . For precise diagrams, and layout, please refer to the original PDF.
SMD Type P-Channel Enhancement MOSFET SI2301BDS (KI2301BDS) MOSFET ■ Features ● VDS (V) =-20V ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D ■ Abs...
View more extracted text
ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) G1 S2 3D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃) *1 Ta=25℃ Ta=70℃ Pulsed Drain Current *2 Power Dissipation *1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient *1 *3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA TJ Tstg *1 Surface Mounted on FR4 Board, t ≤ 5 sec. *2 Pulse width limited by maximum junction temperature. *3 Surface Mounted on FR4 Board. +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1 0.68
📁 Similar Datasheet
Brand Logo
Part Number
Description
Manufacturer
SI2301BDS
P-Channel MOSFET
Vishay Siliconix
SiPU
SI2301BDS
P-Channel Enhancement Mode Field Effect Transistor
SiPU
SI2301BDS-T1-GE3
P-Channel MOSFET
VBsemi
Si2301BD
P-Channel MOSFET
Vishay Siliconix
UMW
SI2301B
P-Channel MOSFET
UMW
More Datasheets from Kexin Semiconductor
SI2301BDS Datasheet
