Download SI2301BDS Datasheet PDF
Kexin Semiconductor
SI2301BDS
Features - VDS (V) =-20V - RDS(ON) < 100mΩ (VGS =-4.5V) - RDS(ON) < 150mΩ (VGS =-2.5V) G1 S2 3D - Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =150℃) - 1 Ta=25℃ Ta=70℃ Pulsed Drain Current - 2 Power Dissipation - 1 Ta=25℃ Ta=70℃ Thermal Resistance.Junction- to-Ambient - 1 - 3 Junction Temperature Storage Temperature Range Symbol VDS VGS ID IDM PD Rth JA TJ Tstg - 1 Surface Mounted on FR4 Board, t ≤ 5 sec. - 2 Pulse width limited by maximum junction temperature. - 3 Surface Mounted on FR4 Board. +0.2 2.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 0-0.1 +0.1...