SI2301BDS
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET
- 100 % Rg Tested
- pliant to Ro HS Directive 2002/95/EC
G1 S2
3D
Top View Si2301 BDS (L1)-
- Marking Code
Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5 s Steady State
Drain-Source Voltage
- 20
Gate-Source Voltage
±8
Continuous Drain Current (TJ = 150 °C)b
TA = 25 °C TA = 70 °C
- 2.4
- 1.9
- 2.2
- 1.8
Pulsed Drain Currenta
- 10
Continuous Source Current (Diode Conduction)b
- 0.72
- 0.6
Power Dissipationb
TA = 25 °C TA = 70 °C
0.9 0.57
0.7 0.45
Operating Junction and Storage Temperature...
