Si2301BD
Si2301BDS
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 20 r DS(on) (W)
0.100 @ VGS =
- 4.5 V 0.150 @ VGS =
- 2.5 V
ID (A)b
- 2.4
- 2.0
TO-236 (SOT-23)
1 3 D Ordering Information: Si2301BDS-T1
Top View Si2301 BDS (L1)-
- Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (Diode Conduction)b Power Dissipationb Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
5 sec
- 20 "8
- 2.4
- 1.9
- 10
- 0.72 0.9 0.57
Steady State
Unit
- 2.2
- 1.8 A
- 0.6 0.7 0.45
- 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE...
