SI2301B
FEATURE
Trench FET Power MOSFET
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
MARKING
A1SHB
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ=150℃) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤ 5s) Junction Temperature Storage Temperature
VDS VGS ID IDM IS PD RθJA TJ Tstg
Value -20 ±8 -2.5 -10
-0.72 0.35 357 150 -55 ~+150
Unit V
W ℃/W ℃
.umw-ic.
友台半导体有限公司
UMW R
UMW SI2301B
Ta=25 ℃ unless otherwise specified
Parameter Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current
Drain-source on-state resistance a
Forward transconductance a Dynamicb Input capacitance Output capacitance Reverse transfer capacitance
Total gate charge
Symbol Test Condition
V(BR)DSS VGS(th) IGSS IDSS
RDS(on) gfs
VGS =...
