• Part: SI2308A
  • Description: 60V N-ChanneI MOSFET
  • Category: MOSFET
  • Manufacturer: UMW
  • Size: 724.63 KB
Download SI2308A Datasheet PDF
UMW
SI2308A
Features VDS(V)=60V ID=3A(VGS=10V) RDS(ON)<80mΩ(VGS=10V), ID=3A RDS(ON)<95mΩ(VGS=4.5V), ID=1.9A 3.Pinning information Pin Symbol Description SOT-23 GATE SOURCE DRAIN 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature Storage Temperature Range Note.1: Surface Mounted on FR4 Board, t ≤ 5 sec. Note.2: Surface Mounted on FR4 Board TA=25°C TA=70°C TA=25°C TA=70°C (Note.1) (Note.2) 2.Applications Load/Power Switching Interfacing Switching Logic Level Shift Battery Management for Ultra Small Portable Symbol VDS VGS ID IDM PD Rth JA TJ TSTG Rating 60 ±20 3 1.9 10 1.25 0.8 100 166 150 -55 to 150 Units V A W °C/W °C UTD Semiconductor Co.,Limited .umw-ic. Nov.2024 1 of 7 .umw-ic. UMW SI2308A 60V N-Channe I...