• Part: SI2302A
  • Description: 20V N-ChanneI MOSFET
  • Category: MOSFET
  • Manufacturer: UMW
  • Size: 156.55 KB
Download SI2302A Datasheet PDF
UMW
SI2302A
Description The SI2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. 3.Pinning information Pin Symbol Description SOT-23 GATE SOURCE DRAIN 4.Absolute Maximum Ratings TA= 25°C Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current - 1 Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient - 1 - 2 Junction Temperature Storage Temperature Range Notes : - 1.Surface Mounted on FR4 Board, t ≤ 5 sec. - 2.Surface Mounted on FR4 Board. TA=25°C TA=70°C TA=25°C TA=70°C 2.Features VDS=20V RDS(ON)=45mΩ(VGS=4.5V), ID=3.6A RDS(ON)=60mΩ(VGS=2.5V), ID=3.1A Symbol VDS VGS ID IDM PD Rth JA TJ TSTG Rating 20 ±8 3.6 3.1 10 1.25 0.8 100 166 150 -55 to 150 Units V A W °C/W °C UTD Semiconductor Co.,Limited...