SI2306A
Description
The SI2306A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
2.Features
VDS(V)=30V RDS(ON)=35mΩ(VGS=10V), ID=4A RDS(ON)<50mΩ(VGS=4.5V), ID=3.5A
3.Pinning information
Pin
Symbol Description
SOT-23
GATE
SOURCE
DRAIN
1 2
4.Absolute Maximum Ratings TA= 25°C
Drain-Source Voltage Gate-Source Voltage
Parameter
Continuous Drain Current TJ=150°C
- 1
Pulsed Drain Current
Power Dissipation
- 1
Thermal Resistance.Junction- to-Ambient
Junction Temperature Storage Temperature Range
TA=25°C TA=70°C
TA=25°C TA=70°C t ≤ 5 sec Steady State
Symbol VDS VGS ID IDM PD
Rth JA TJ TSTG
- 1.Surface Mounted on FR4 Board,.t ≤ 5 sec
Rating 30 ±20 4 3.5 16 1.25 0.8 100 130 150
-55 to 150
Units V
A W °C/W °C
UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024
1 of 7
.umw-ic.
UMW...
