Full PDF Text Transcription for SI2301BDS (Reference)
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SI2301BDS. For precise diagrams, and layout, please refer to the original PDF.
SI2301BDS P-Channel Enhancement Mode Field Effect Transistor FEATURES °Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple drive requirement °SO...
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for low RDS(ON) °Rugged and reliable °Simple drive requirement °SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mȤ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTEğThe SI2301BDS is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGSčTA=25¥unless otherwise notedĎ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125¥ Symbol VDS VGS ID Limit Unit -20 V ±12 V -3.6 A - Pulse d b IDM -11 A Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.25 A 1.
SI2301BDS Datasheet
