• Part: SI2301BDS
  • Description: P-Channel Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: SiPU
  • Size: 122.13 KB
Download SI2301BDS Datasheet PDF
SiPU
SI2301BDS
FEATURES °Super high dense cell design for low RDS(ON) °Rugged and reliable °Simple drive requirement °SOT-23 package PRODUCT SUMMARY VDSS RDS(ON) (mȤ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTEğThe SI2301BDS is available in a lead-free package ABSOLUTE MAXIUM RATINGSčTA=25- unless otherwise notedĎ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125- Symbol VDS VGS ID Limit Unit -20 ±12 -3.6 - Pulse d b -11 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.25 -55 to 150 º THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth...