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NCE2025S - N-Channel MOSFET

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number NCE2025S
Manufacturer VBsemi
File Size 256.82 KB
Description N-Channel MOSFET
Datasheet download datasheet NCE2025S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NCE2025S-VB NCE2025S-VB Datasheet N-Channel 20-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0049 at VGS = 4.5 V 20 0.0056 at VGS = 2.5 V ID (A)a 20e 20e Qg (Typ.) 27.5 nC S1 S2 S3 G4 SO-8 Top View 8D 7D 6D 5D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Low-Side MOSFET for Synchronous Buck - Game Machine - PC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 16 TC = 25 °C 20e Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 18.2 15.2b, c Pulsed Drain Current TA = 70 °C 12.