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NCE2025S - N-Channel Enhancement Mode Power MOSFET

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NCE Power Semiconductor

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NCE2025S N-Channel Enhancement Mode Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCE2025S

Datasheet Details

Part number	NCE2025S
Manufacturer	NCE Power Semiconductor
File Size	395.27 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2025S Datasheet
Additional preview pages of the NCE2025S datasheet.

Product details

Description

The NCE2025S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =25A RDS(ON) < 4mΩ @ VGS=4.5V RDS(ON) < 6mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current Schematic diagram.

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Published: May 15, 2016 |