NCE2025I - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =20V,ID =25A RDS(ON).

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NCE2025I n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE2025I
Manufacturer	NCE Power Semiconductor
File Size	339.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2025I Datasheet

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http://www.ncepower.com Pb Free Product NCE2025I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2025I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =25A RDS(ON) <13mΩ @ VGS=10V (Typ:10.