Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Features
- G (1) 1 23
S (3)
w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions)
Part Number UF3C065080T3S
Package TO-220-3L
Marking UF3C065080T3S
Typical.
UF3C065080T3S-UnitedSiC.pdf
