UF3C065080B7S Datasheet (qorvo)

UF3C065080B7S, SiC FET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UF3C065080B7S Features

* w On-resistance RDS(on): 85mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 69nC w Low body diode VFSD: 1.54V w Low gate charge: QG = 23nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Package creepage and clearance distance > 6.1mm w Kelvin source