UF3C065040B3 Datasheet (onsemi) - 650V SiC Cascode JFET

UF3C065040B3, 650V SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UF3C065040B3 Features

* Typical On-resistance RDS(on),typ of 42 mW

* Maximum Operating Temperature of 175°C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected, HBM Class 2

* Very Low Switching Losses (Required RC-snubber Loss