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TP65H300G4LSG GaN FET

TP65H300G4LSG Description

TP65H300G4LSG 650V SuperGaN™ GaN FET in PQFN (source tab) Preliminary Datasheet .
The TP65H300G4WS 650V, 240 mΩ Super Gallium Nitride (SuperGaN™) FET is a normally-off device.

TP65H300G4LSG Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on) production tested
* Robust design, defined by
* Intrinsic lifetime tests
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss Benef

TP65H300G4LSG Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor Key Specifications VDS (V) min V(TR)DSS (V) max 650 720 RDS(on) (mΩ) max
* 288 QRR (nC) typ 23 QG (nC) typ 7
* Dynamic RDS(on); see Figures 19 and 20 Cascode Schematic Symbol August 20, 2019 tp65h300g4lsg.1 C

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Datasheet Details

Part number
TP65H300G4LSG
Manufacturer
Transphorm
File Size
1.32 MB
Datasheet
TP65H300G4LSG-Transphorm.pdf
Description
GaN FET

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