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TP65H300G4JSGB 650V GaN FET

TP65H300G4JSGB Description

Specifications in this document are tentative and subject to change Datasheet TP65H300G4JSGB 650V SuperGaN® GaN FET in PQFN (source tab) .
The TP65H300G4JSGB 650V, 240mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

TP65H300G4JSGB Features

* Gen IV technology
* JEDEC-qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Very low QRR
* Reduced crossover loss
* RoHS compliant and Halogen-free

TP65H300G4JSGB Applications

* Consumer
* Power adapters
* Low power SMPS
* Lighting Key Specifications VDS (V) min VDSS(TR) (V) max RDS(on) (mΩ) max
* 650 800 312 Qoss (nC) typ 19 QG (nC) typ 3.5
* Dynamic R ; DS(on) see Figures 18 and 19 Cascode Schematic Symbol Cascode Device Structure TP65H30

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650V GaN FET Renesas
Renesas TP65H300G4JSGB-like datasheet