Datasheet4U Logo Datasheet4U.com

TP65H035G4YS 650V SuperGaN FET

📥 Download Datasheet Datasheet Preview Page 1

Description

Specifications in this document are tentative and subject to change Datasheet TP65H035G4YS 650V SuperGaN® FET in TO-247 (source tab) .
The TP65H035G4YS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Renesas’s Gen IV platform.

📥 Download Datasheet

Preview of TP65H035G4YS PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* JEDEC qualified GaN technology
* Dynamic RDS(on)eff production tested
* Robust design, defined by
* Wide gate safety margin
* Transient over-voltage capability
* Enhanced inrush current capability
* Very low QRR
* Reduced crossover loss Benefits
* Enable

Applications

* Datacom
* Broad industrial
* PV inverter
* Servo motor D G KS S Cascode Schematic Symbol Cascode Device Structure Key Specifications VDSS (V) VDSS(TR)(V) RDS(on)eff (mΩ) max
* 650 800 41 QOSS (nC) typ 142 QG (nC) typ 42.7
* Dynamic on-resistance; see Figures 19 an

TP65H035G4YS Distributors

📁 Related Datasheet

TP65H035G4QS TP65H035WS TP65H035WSQA TP65H050BS TP65H050WS TP65H070L

📌 All Tags

TP65H035G4YS 650V SuperGaN FET Renesas
Renesas TP65H035G4YS-like datasheet
TP65H035G4WS
TP65H050G4BS
TP65H050G4QS
TP65H050G4WS
TP65H050G4YS